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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14 ZVP3306A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60 E-Line TO92 Compatible VALUE -160 -1.6 20 UNIT V mA A V mW C 625 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -400 14 60 50 25 8 8 8 8 8 -60 -1.5 -3.5 20 -0.5 -50 MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125C(2) VDS=-18 V, VGS=-10V VGS=-10V,ID=-200mA VDS=-18V,ID=-200mA mA Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-18V, VGS=0V, f=1MHz VDD -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-429 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3306A TYPICAL CHARACTERISTICS -1.2 -1.0 VGS=-20V -16V -14V -0.8 -0.6 -0.4 -7V -0.2 0 0 -10 -20 -30 -40 -50 -6V -5V -4V -12V -10V -9V -8V -1.0 VGS= -16V -14V -0.8 -12V -0.6 -10V -9V -8V -7V -0.2 -6V -5V -4.5V 0 -2 -4 -6 -8 -10 ID - Drain Current (Amps) ID - Drain Current (Amps) -0.4 0 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -10 -8 ID= -6 -400mA -1.0 -0.8 VDS=-10V -0.6 -4 -200mA -0.4 -2 -0.2 0 0 -2 -4 -6 -8 -100mA -10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () Transfer Characteristics Normalised RDS(on) and VGS(th) 100 VGS=-5V -6V -7V 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 Re ce ur So ain R ce an ist s DS VGS=-10V ID=0.37A n) (o -10V 10 -15V -20V Dr Gate Thresh old VGS=VDS ID=-1mA Voltage VG S(TH) 1 -10 -100 -1000 20 40 60 80 100 120 140 160 180 ID-Drain Current (mA) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3-430 ZVP3306A TYPICAL CHARACTERISTICS 120 100 80 Note:VDS=-10V 60 40 20 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 120 100 80 Note:VDS=-10V 60 40 20 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 gfs-Transconductance (mS) gfs-Transconductance (mS) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 60 50 40 30 20 10 Crss 0 0 -10 -20 -30 -40 -50 -60 -70 Ciss Note:VGS=0V f=1MHz 2 1 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 VDS= -20V -40V -60V Note:ID=- 0.2A C-Capacitance (pF) Coss VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-431 |
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